Datasheet > MUN2237T1

MUN2237T1

更新时间： 2024-02-05 22:32:41

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管开关光电二极管
页数	文件大小	规格书
11页	158K
描述
Bias Resistor Transistor

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中文翻译

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技术参数
数据手册

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MUN2237T1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SC-59
包装说明：	LEAD FREE, CASE 318D-04, SC-59, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.38
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 0.47	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	80	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3	湿度敏感等级：	NOT SPECIFIED
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN	认证状态：	COMMERCIAL
表面贴装：	YES	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MUN2237T1 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

MUN2211T1

SERIES

with Monolithic Bias Resistor Network

NPN SILICON

This new series of digital transistors is designed to replace a single device and

its external resistor bias network. The BRT (Bias Resistor Transistor) contains a

single transistor with a monolithic bias network consisting of two resistors; a

series base resistor and a base–emitter resistor. The BRT eliminates these indi-

vidual components by

BIAS RESISTOR

TRANSISTORS

integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SC–59 package which is

designed for low power surface mount applications.

• Simplifies Circuit Design

SC–59

CASE 318D, STYLE 1

• Reduces Board Space

• Reduces Component Count

PIN 3

• Moisture Sensitivity Level: 1

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 2

• ESD Rating – Human Body Model: Class 1

BASE

ESD Rating – Machine Model: Class B

(INPUT)

PIN 1

EMITTER

• The SC–59 package can be soldered using wave or reflow. The modified

gull–winged leads absorb thermal stress during soldering eliminating the

possibility of damage to the die.

(GROUND)

• Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

MARKINGDIAGRAM

DEVICE MARKING INFORMATION

*See specific marking information in the device marking table on page 2 of this data sheet.

8X = Specific Device Code*

M = Date Code

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Rating

Symbol

V_CBO

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V_CEO

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

T_A= 25°C

230(Note 1)

338(Note 2)

1.8 (Note 1)

2.7 (Note 2)

540(Note 1)

370(Note 2)

264(Note 1)

287(Note 2)

–55 to +150

Derate above 25°C

°C/W

°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R_θJA

R_θJL

Junction and Storage

Temperature Range

T_J, T_stg

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

MUN2211T1 Series–1/11

12 3 4 5 6 7...11

中文翻译

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与MUN2237T1相关器件

型号	品牌	获取价格	描述	数据表
MUN2237T1G	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2238	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 2.2 k, R2 = k
MUN2238_16	ONSEMI	获取价格	Digital Transistors (BRT)
MUN2238T1G	ONSEMI	获取价格	Digital Transistors (BRT)
MUN2240	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = k
MUN2240	WEITRON	获取价格	NPN Silicon Bias Resistor Transistor
MUN2240_14	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47k R2 = k
MUN2240_16	ONSEMI	获取价格	Digital Transistors (BRT)
MUN2240-G	WEITRON	获取价格	Transistor
MUN2240T1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR

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