Datasheet > MUN2234T1

MUN2234T1

更新时间： 2024-01-27 04:19:00

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
11页	158K
描述
Bias Resistor Transistor

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技术参数
数据手册
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MUN2234T1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SC-59
包装说明：	LEAD FREE, CASE 318D-04, SC-59, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.37
Is Samacsys：	N	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 2.14
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	80
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
湿度敏感等级：	NOT SPECIFIED	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
认证状态：	COMMERCIAL	表面贴装：	YES
端子面层：	MATTE TIN	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MUN2234T1 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

MUN2211T1

SERIES

with Monolithic Bias Resistor Network

NPN SILICON

This new series of digital transistors is designed to replace a single device and

its external resistor bias network. The BRT (Bias Resistor Transistor) contains a

single transistor with a monolithic bias network consisting of two resistors; a

series base resistor and a base–emitter resistor. The BRT eliminates these indi-

vidual components by

BIAS RESISTOR

TRANSISTORS

integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SC–59 package which is

designed for low power surface mount applications.

• Simplifies Circuit Design

SC–59

CASE 318D, STYLE 1

• Reduces Board Space

• Reduces Component Count

PIN 3

• Moisture Sensitivity Level: 1

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 2

• ESD Rating – Human Body Model: Class 1

BASE

ESD Rating – Machine Model: Class B

(INPUT)

PIN 1

EMITTER

• The SC–59 package can be soldered using wave or reflow. The modified

gull–winged leads absorb thermal stress during soldering eliminating the

possibility of damage to the die.

(GROUND)

• Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

MARKINGDIAGRAM

DEVICE MARKING INFORMATION

*See specific marking information in the device marking table on page 2 of this data sheet.

8X = Specific Device Code*

M = Date Code

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Rating

Symbol

V_CBO

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V_CEO

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

T_A= 25°C

230(Note 1)

338(Note 2)

1.8 (Note 1)

2.7 (Note 2)

540(Note 1)

370(Note 2)

264(Note 1)

287(Note 2)

–55 to +150

Derate above 25°C

°C/W

°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R_θJA

R_θJL

Junction and Storage

Temperature Range

T_J, T_stg

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

MUN2211T1 Series–1/11

12 3 4 5 6 7...11

中文翻译

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MUN2234T1 替代型号

型号	品牌	替代类型	描述	数据表
MUN2234T1G	ONSEMI	功能相似	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k
MUN2234T1	ONSEMI	功能相似	NPN SILICON BIAS RESISTOR TRANSISTOR

与MUN2234T1相关器件

型号	品牌	获取价格	描述	数据表
MUN2234T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k
MUN2234T3	ONSEMI	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN, BIP General Purpo
MUN2235	ONSEMI	获取价格	NPN Transistors with Monolithic Bias Resistor Network
MUN2235_15	ONSEMI	获取价格	NPN Transistors with Monolithic Bias Resistor Network
MUN2235_16	ONSEMI	获取价格	Digital Transistors (BRT)
MUN2235T1G	ONSEMI	获取价格	NPN Transistors with Monolithic Bias Resistor Network
MUN2236	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 100 k, R2 = 100 k
MUN2236	WEITRON	获取价格	NPN Silicon Bias Resistor Transistor
MUN2236-G	WEITRON	获取价格	Transistor
MUN2236T1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR

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