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MUN2236T1 PDF预览

MUN2236T1

更新时间: 2024-02-18 09:53:58
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
12页 150K
描述
NPN SILICON BIAS RESISTOR TRANSISTOR

MUN2236T1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-59包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.35
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.338 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MUN2236T1 数据手册

 浏览型号MUN2236T1的Datasheet PDF文件第2页浏览型号MUN2236T1的Datasheet PDF文件第3页浏览型号MUN2236T1的Datasheet PDF文件第4页浏览型号MUN2236T1的Datasheet PDF文件第5页浏览型号MUN2236T1的Datasheet PDF文件第6页浏览型号MUN2236T1的Datasheet PDF文件第7页 
MUN2211T1 Series  
Preferred Devices  
Bias Resistor Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a baseemitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the  
SC59 package which is designed for low power surface  
mount applications.  
http://onsemi.com  
NPN SILICON  
BIAS RESISTOR  
TRANSISTORS  
Simplifies Circuit Design  
Reduces Board Space  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 2  
BASE  
(INPUT)  
Reduces Component Count  
Moisture Sensitivity Level: 1  
R
R
1
2
ESD Rating Human Body Model: Class 1  
ESD Rating Machine Model: Class B  
PIN 1  
EMITTER  
(GROUND)  
The SC59 package can be soldered using wave or reflow. The  
modified gullwinged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
Available in 8 mm embossed tape and reel  
MARKING DIAGRAM  
3
Use the Device Number to order the 7 inch/3000 unit reel.  
PbFree Packages are Available  
2
1
8x  
M
SC59  
CASE 318D  
STYLE 1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
CEO  
50  
Vdc  
8x = Specific Device Code*  
M = Date Code  
I
100  
mAdc  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
A
Derate above 25°C  
P
230 (Note 1)  
338 (Note 2)  
1.8 (Note 1)  
2.7 (Note 2)  
mW  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
D
T = 25°C  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance  
Junction-to-Ambient  
R
q
540 (Note 1)  
370 (Note 2)  
JA  
DEVICE MARKING INFORMATION  
*See specific marking information in the device marking table  
on page 2 of this data sheet.  
Thermal Resistance −  
Junction-to-Lead  
R
q
264 (Note 1)  
287 (Note 2)  
JL  
Junction and Storage  
Temperature Range  
T , T  
J
55 to +150  
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR4 @ Minimum Pad.  
2. FR4 @ 1.0 x 1.0 inch Pad.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 Rev. 11  
MUN2211T1/D  
 

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