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MUN2233T1G

更新时间： 2024-01-25 08:46:06
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
12页 150K
描述
NPN SILICON BIAS RESISTOR TRANSISTOR

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中文翻译

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MUN2233T1G 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PDSO-G3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.89其他特性：BUILT IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN功耗环境最大值：0.2 W
认证状态：Not Qualified表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONVCEsat-Max：0.25 V

MUN2233T1G 数据手册

 浏览型号MUN2233T1G的Datasheet PDF文件第2页浏览型号MUN2233T1G的Datasheet PDF文件第3页浏览型号MUN2233T1G的Datasheet PDF文件第4页浏览型号MUN2233T1G的Datasheet PDF文件第5页浏览型号MUN2233T1G的Datasheet PDF文件第6页浏览型号MUN2233T1G的Datasheet PDF文件第7页 
MUN2211T1 Series  
Preferred Devices  
Bias Resistor Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base−emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the  
SC−59 package which is designed for low power surface  
mount applications.  
http://onsemi.com  
NPN SILICON  
BIAS RESISTOR  
TRANSISTORS  
• Simplifies Circuit Design  
• Reduces Board Space  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 2  
BASE  
(INPUT)  
• Reduces Component Count  
• Moisture Sensitivity Level: 1  
R
R
1
2
• ESD Rating − Human Body Model: Class 1  
ESD Rating − Machine Model: Class B  
PIN 1  
EMITTER  
(GROUND)  
• The SC−59 package can be soldered using wave or reflow. The  
modified gull−winged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
• Available in 8 mm embossed tape and reel  
MARKING DIAGRAM  
3
Use the Device Number to order the 7 inch/3000 unit reel.  
• Pb−Free Packages are Available  
2
1
8x  
M
SC−59  
CASE 318D  
STYLE 1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
CEO  
50  
Vdc  
8x = Specific Device Code*  
M = Date Code  
I
100  
mAdc  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
A
Derate above 25°C  
P
230 (Note 1)  
338 (Note 2)  
1.8 (Note 1)  
2.7 (Note 2)  
mW  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
D
T = 25°C  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance −  
Junction-to-Ambient  
R
q
540 (Note 1)  
370 (Note 2)  
JA  
DEVICE MARKING INFORMATION  
*See specific marking information in the device marking table  
on page 2 of this data sheet.  
Thermal Resistance −  
Junction-to-Lead  
R
q
264 (Note 1)  
287 (Note 2)  
JL  
Junction and Storage  
Temperature Range  
T , T  
J
−55 to +150  
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−4 @ Minimum Pad.  
2. FR−4 @ 1.0 x 1.0 inch Pad.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 11  
MUN2211T1/D  
 
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中文翻译

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MUN2233T1G 替代型号

型号 品牌 替代类型 描述 数据表
MUN2232T1 ONSEMI

完全替代

 NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2233T1 ONSEMI

类似代替

 NPN SILICON BIAS RESISTOR TRANSISTOR

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