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MUN2231T1 PDF预览

MUN2231T1

更新时间: 2024-10-27 22:13:19
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
11页 158K
描述
Bias Resistor Transistor

MUN2231T1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.46
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):8
元件数量:1极性/信道类型:NPN
最大功率耗散 (Abs):0.338 W子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON

MUN2231T1 数据手册

 浏览型号MUN2231T1的Datasheet PDF文件第2页浏览型号MUN2231T1的Datasheet PDF文件第3页浏览型号MUN2231T1的Datasheet PDF文件第4页浏览型号MUN2231T1的Datasheet PDF文件第5页浏览型号MUN2231T1的Datasheet PDF文件第6页浏览型号MUN2231T1的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistors  
NPN Silicon Surface Mount Transistors  
MUN2211T1  
SERIES  
with Monolithic Bias Resistor Network  
NPN SILICON  
This new series of digital transistors is designed to replace a single device and  
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a  
single transistor with a monolithic bias network consisting of two resistors; a  
series base resistor and a base–emitter resistor. The BRT eliminates these indi-  
vidual components by  
BIAS RESISTOR  
TRANSISTORS  
3
integrating them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SC–59 package which is  
designed for low power surface mount applications.  
• Simplifies Circuit Design  
2
1
SC–59  
CASE 318D, STYLE 1  
• Reduces Board Space  
• Reduces Component Count  
PIN 3  
• Moisture Sensitivity Level: 1  
COLLECTOR  
(OUTPUT)  
R1  
R2  
PIN 2  
• ESD Rating – Human Body Model: Class 1  
BASE  
ESD Rating – Machine Model: Class B  
(INPUT)  
PIN 1  
EMITTER  
• The SC–59 package can be soldered using wave or reflow. The modified  
gull–winged leads absorb thermal stress during soldering eliminating the  
possibility of damage to the die.  
(GROUND)  
• Available in 8 mm embossed tape and reel  
Use the Device Number to order the 7 inch/3000 unit reel.  
MARKINGDIAGRAM  
DEVICE MARKING INFORMATION  
*See specific marking information in the device marking table on page 2 of this data sheet.  
8X  
M
8X = Specific Device Code*  
M = Date Code  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Rating  
Symbol  
VCBO  
Value  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
VCEO  
50  
Vdc  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
TA = 25°C  
P
230(Note 1)  
338(Note 2)  
1.8 (Note 1)  
2.7 (Note 2)  
540(Note 1)  
370(Note 2)  
264(Note 1)  
287(Note 2)  
–55 to +150  
mW  
D
Derate above 25°C  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance –  
Junction-to-Ambient  
Thermal Resistance –  
Junction-to-Lead  
RθJA  
RθJL  
Junction and Storage  
Temperature Range  
TJ, Tstg  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
MUN2211T1 Series–1/11  

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