5秒后页面跳转
MUN2230T1 PDF预览

MUN2230T1

更新时间: 2024-01-11 17:05:07
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
11页 158K
描述
Bias Resistor Transistor

MUN2230T1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-59
包装说明:LEAD FREE, CASE 318D-04, SC-59, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.36
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):3JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:COMMERCIAL
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MUN2230T1 数据手册

 浏览型号MUN2230T1的Datasheet PDF文件第2页浏览型号MUN2230T1的Datasheet PDF文件第3页浏览型号MUN2230T1的Datasheet PDF文件第4页浏览型号MUN2230T1的Datasheet PDF文件第5页浏览型号MUN2230T1的Datasheet PDF文件第6页浏览型号MUN2230T1的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistors  
NPN Silicon Surface Mount Transistors  
MUN2211T1  
SERIES  
with Monolithic Bias Resistor Network  
NPN SILICON  
This new series of digital transistors is designed to replace a single device and  
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a  
single transistor with a monolithic bias network consisting of two resistors; a  
series base resistor and a base–emitter resistor. The BRT eliminates these indi-  
vidual components by  
BIAS RESISTOR  
TRANSISTORS  
3
integrating them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SC–59 package which is  
designed for low power surface mount applications.  
• Simplifies Circuit Design  
2
1
SC–59  
CASE 318D, STYLE 1  
• Reduces Board Space  
• Reduces Component Count  
PIN 3  
• Moisture Sensitivity Level: 1  
COLLECTOR  
(OUTPUT)  
R1  
R2  
PIN 2  
• ESD Rating – Human Body Model: Class 1  
BASE  
ESD Rating – Machine Model: Class B  
(INPUT)  
PIN 1  
EMITTER  
• The SC–59 package can be soldered using wave or reflow. The modified  
gull–winged leads absorb thermal stress during soldering eliminating the  
possibility of damage to the die.  
(GROUND)  
• Available in 8 mm embossed tape and reel  
Use the Device Number to order the 7 inch/3000 unit reel.  
MARKINGDIAGRAM  
DEVICE MARKING INFORMATION  
*See specific marking information in the device marking table on page 2 of this data sheet.  
8X  
M
8X = Specific Device Code*  
M = Date Code  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Rating  
Symbol  
VCBO  
Value  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
VCEO  
50  
Vdc  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
TA = 25°C  
P
230(Note 1)  
338(Note 2)  
1.8 (Note 1)  
2.7 (Note 2)  
540(Note 1)  
370(Note 2)  
264(Note 1)  
287(Note 2)  
–55 to +150  
mW  
D
Derate above 25°C  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance –  
Junction-to-Ambient  
Thermal Resistance –  
Junction-to-Lead  
RθJA  
RθJL  
Junction and Storage  
Temperature Range  
TJ, Tstg  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
MUN2211T1 Series–1/11  

MUN2230T1 替代型号

型号 品牌 替代类型 描述 数据表
MUN2230T1G ONSEMI

功能相似

Bias Resistor Transistors
MUN2230T1 ONSEMI

功能相似

NPN SILICON BIAS RESISTOR TRANSISTOR
DTD113E ONSEMI

功能相似

NPN SILICON BIAS RESISTOR TRANSISTOR

与MUN2230T1相关器件

型号 品牌 获取价格 描述 数据表
MUN2230T1G ONSEMI

获取价格

Bias Resistor Transistors
MUN2231 ONSEMI

获取价格

NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2231 WEITRON

获取价格

NPN Silicon Bias Resistor Transistor
MUN2231-G WEITRON

获取价格

Transistor
MUN2231RT1 LRC

获取价格

Bias Resistor Transistor
MUN2231T1 ONSEMI

获取价格

NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2231T1 LRC

获取价格

Bias Resistor Transistor
MUN2231T1 MOTOROLA

获取价格

NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2231T1G ONSEMI

获取价格

Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
MUN2232 WEITRON

获取价格

NPN Silicon Bias Resistor Transistor