是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | MINIMOLD, SST, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 1.56 |
其他特性: | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 33 | JESD-30 代码: | R-PDSO-G3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTD113EF | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3 | |
DTD113EK | ROHM |
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Digital transistors (built-in resistors) | |
DTD113EK_09 | ROHM |
获取价格 |
500mA / 50V Digital transistors (with built-in resistors) | |
DTD113EK_1 | ROHM |
获取价格 |
500mA / 50V Digital transistors (with built-in resistors) | |
DTD113EKT146 | ROHM |
获取价格 |
NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) | |
DTD113EKT147 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | |
DTD113EKT246 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
DTD113EL | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP | |
DTD113ELTL2 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 | |
DTD113ELTL3 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 |