是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | BGA, BGA119,7X17,50 |
针数: | 119 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.77 | 最长访问时间: | 6.5 ns |
其他特性: | FLOW THROUGH ARCHITECTURE | 最大时钟频率 (fCLK): | 133 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B119 |
JESD-609代码: | e1 | 长度: | 22 mm |
内存密度: | 4718592 bit | 内存集成电路类型: | ZBT SRAM |
内存宽度: | 36 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 119 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128KX36 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA119,7X17,50 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
电源: | 2.5/3.3,3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 2.4 mm | 最大待机电流: | 0.04 A |
最小待机电流: | 3.14 V | 子类别: | SRAMs |
最大压摆率: | 0.225 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3.135 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | BALL | 端子节距: | 1.27 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 20 |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CY7C1352 | CYPRESS |
获取价格 |
256K x18 Pipelined SRAM with NoBL Architecture | |
CY7C135-20JC | CYPRESS |
获取价格 |
4K x 8 Dual-Port Static RAM and 4K x 8 Dual-Port SRAM with Semaphores | |
CY7C135-20JCT | CYPRESS |
获取价格 |
Dual-Port SRAM, 4KX8, 20ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
CY7C1352-100AC | CYPRESS |
获取价格 |
256K x18 Pipelined SRAM with NoBL Architecture | |
CY7C1352-100AI | ETC |
获取价格 |
x18 Fast Synchronous SRAM | |
CY7C1352-133AC | CYPRESS |
获取价格 |
256K x18 Pipelined SRAM with NoBL Architecture | |
CY7C1352-133AI | ETC |
获取价格 |
x18 Fast Synchronous SRAM | |
CY7C1352-143AC | CYPRESS |
获取价格 |
256K x18 Pipelined SRAM with NoBL Architecture | |
CY7C135-25JC | CYPRESS |
获取价格 |
4K x 8 Dual-Port Static RAM and 4K x 8 Dual-Port SRAM with Semaphores | |
CY7C135-25JCT | CYPRESS |
获取价格 |
Dual-Port SRAM, 4KX8, 25ns, CMOS, PQCC52, PLASTIC, LCC-52 |