Datasheet > CY7C1352-80AC

CY7C1352-80AC

更新时间： 2024-11-26 05:19:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
12页	187K
描述
256K x18 Pipelined SRAM with NoBL Architecture

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CY7C1352-80AC 数据手册

CY7C1352

256K x18 Pipelined SRAM with NoBL™ Architecture

• Low standby power

Features

Functional Description

• Pin compatible and functionally equivalent to ZBT™

devices MCM63Z818 and MT55L256L18P

The CY7C1352 is a 3.3V 256K by 18 synchronous-pipelined

Burst SRAM designed specifically to support unlimited true

back-to-back Read/Write operations without the insertion of

wait states. The CY7C1352 is equipped with the advanced No

Bus Latency™ (NoBL™) logic required to enable consecutive

Read/Write operations with data being transferred on every

clock cycle. This feature dramatically improves the throughput

of the SRAM, especially in systems that require frequent

Read/Write transitions.The CY7C1352 is pin/functionally com-

patible to ZBT™ SRAMs MCM63Z819 and MT55L256L18P.

• Supports 143-MHz bus operations with zero wait states

— Data is transferred on every clock

• Internally self-timed output buffer control to eliminate

the need to use OE

• Fully registered (inputs and outputs) for pipelined

operation

• Byte Write Capability

• 256K x 18 common I/O architecture

• Single 3.3V power supply

All synchronous inputs pass through input registers controlled

by the rising edge of the clock. All data outputs pass through

output registers controlled by the rising edge of the clock. The

clock input is qualified by the Clock Enable (CEN) signal, which

when deasserted suspends operation and extends the previ-

ous clock cycle. Maximum access delay from the clock rise is

4.0 ns (143-MHz device).

• Fast clock-to-output times

— 4.0 ns (for 143-MHz device)

— 4.2 ns (for 133-MHz device)

— 5.0 ns (for 100-MHz device)

Write operations are controlled by the four Byte Write Select

— 7.0 ns (for 80-MHz device)

(BWS

) and a Write Enable (WE) input. All writes are con-

[1:0]

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed writes

• Asynchronous output enable

• JEDEC-standard 100-pin TQFP package

• Burst Capability—linear or interleaved burst order

ducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE , CE , CE ) and an

asynchronous Output Enable (OE) provide for easy bank se-

lection and output three-state control. In order to avoid bus

contention, the output drivers are synchronously three-stated

during the data portion of a write sequence.

Logic Block Diagram

CLK

Data-In REG.

ADV/LD

A_[17:0]

CEN

CONTROL

and WRITE

LOGIC

256Kx18

MEMORY

DQ_[15:0]

DP_[1:0]

ARRAY

BWS

[1:0]

Mode

Selection Guide

7C1352-143

7C1352-133

7C1352-100

7C1352-80

Maximum Access Time (ns)

4.0

450

4.2

400

5.0

350

7.0

300

Maximum Operating Current (mA)

Maximum CMOS Standby Current (mA)

Commercial

NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation.

ZBT is a trademark of Integrated Device Technology.

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

August 9, 1999

12 3 4 5 6 7...12

中文翻译

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与CY7C1352-80AC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1352B	CYPRESS	获取价格	256K x 18 Pipilined SRAm with NoBL Architecture
CY7C1352B-100AC	CYPRESS	获取价格	256K x 18 Pipilined SRAm with NoBL Architecture
CY7C1352B-100ACT	CYPRESS	获取价格	暂无描述
CY7C1352B-133AC	CYPRESS	获取价格	256K x 18 Pipilined SRAm with NoBL Architecture
CY7C1352B-143AC	CYPRESS	获取价格	256K x 18 Pipilined SRAm with NoBL Architecture
CY7C1352B-143ACT	CYPRESS	获取价格	ZBT SRAM, 256KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1352B-150AC	CYPRESS	获取价格	256K x 18 Pipilined SRAm with NoBL Architecture
CY7C1352B-166AC	CYPRESS	获取价格	256K x 18 Pipilined SRAm with NoBL Architecture
CY7C1352B-80AC	CYPRESS	获取价格	256K x 18 Pipilined SRAm with NoBL Architecture
CY7C1352F	CYPRESS	获取价格	4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Ar

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