5秒后页面跳转
捷配首页

Datasheet > 存储 > SRAM> CY7C1352F-250AC
CY7C1352F-250AC PDF预览

CY7C1352F-250AC

更新时间： 2024-11-25 22:17:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
13页 292K
描述
4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture

阅读下载

中文翻译

获取价格

CY7C1352F-250AC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：QFP包装说明：14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
针数：100Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.83最长访问时间：2.6 ns
其他特性：PIPELINED ARCHITECTURE最大时钟频率 (fCLK)：250 MHz
I/O 类型：COMMONJESD-30 代码：R-PQFP-G100
JESD-609代码：e0长度：20 mm
内存密度：4718592 bit内存集成电路类型：ZBT SRAM
内存宽度：18湿度敏感等级：3
功能数量：1端子数量：100
字数：262144 words字数代码：256000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256KX18
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：LQFP封装等效代码：QFP100,.63X.87
封装形状：RECTANGULAR封装形式：FLATPACK, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：2.5/3.3,3.3 V认证状态：Not Qualified
座面最大高度：1.6 mm最大待机电流：0.04 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.325 mA最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：TIN LEAD
端子形式：GULL WING端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mmBase Number Matches：1

CY7C1352F-250AC 数据手册

 浏览型号CY7C1352F-250AC的Datasheet PDF文件第2页浏览型号CY7C1352F-250AC的Datasheet PDF文件第3页浏览型号CY7C1352F-250AC的Datasheet PDF文件第4页浏览型号CY7C1352F-250AC的Datasheet PDF文件第5页浏览型号CY7C1352F-250AC的Datasheet PDF文件第6页浏览型号CY7C1352F-250AC的Datasheet PDF文件第7页 
CY7C1352F  
4-Mbit (256Kx18) Pipelined SRAM  
with NoBL™ Architecture  
Functional Description[1]  
Features  
• Pin compatible and functionally equivalent to ZBT™  
The CY7C1352F is a 3.3V, 256K x 18 synchronous-pipelined  
Burst SRAM designed specifically to support unlimited true  
back-to-back Read/Write operations without the insertion of  
wait states. The CY7C1352F is equipped with the advanced  
No Bus Latency™ (NoBL™) logic required to enable consec-  
utive Read/Write operations with data being transferred on  
every clock cycle. This feature dramatically improves the  
throughput of the SRAM, especially in systems that require  
frequent Write/Read transitions.  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. All data outputs pass through  
output registers controlled by the rising edge of the clock. The  
clock input is qualified by the Clock Enable (CEN) signal,  
which, when deasserted, suspends operation and extends the  
previous clock cycle. Maximum access delay from the clock  
rise is 2.8 ns (200-MHz device)  
devices  
• Internally self-timed output buffer control to eliminate  
the need to use OE  
• Byte Write capability  
• 256K x 18 common I/O architecture  
• Single 3.3V power supply  
• 2.5V / 3.3V I/O Operation  
• Fast clock-to-output times  
— 2.6 ns (for 250-MHz device)  
— 2.6 ns (for 225-MHz device)  
— 2.8 ns (for 200-MHz device)  
— 3.5 ns (for 166-MHz device)  
— 4.0 ns (for 133-MHz device)  
— 4.5 ns (for 100-MHz device)  
Write operations are controlled by the two Byte Write Select  
(BW[A:B]) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self-timed write circuitry.  
• Clock Enable (CEN) pin to suspend operation  
• Synchronous self-timed writes  
• Asynchronous output enable (OE)  
• JEDEC-standard 100 TQFP package  
• Burst Capability—linear or interleaved burst order  
• “ZZ” Sleep Mode Option and Stop Clock option  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output three-state control. In order to avoid bus  
contention, the output drivers are synchronously three-stated  
during the data portion of a write sequence.  
Logic Block Diagram  
A0, A1, A  
ADDRESS  
REGISTER 0  
A1  
A0  
A1'  
Q1  
A0'  
Q0  
D1  
D0  
BURST  
LOGIC  
MODE  
C
ADV/LD  
C
CLK  
CEN  
WRITE ADDRESS  
REGISTER 1  
WRITE ADDRESS  
REGISTER 2  
O
U
T
P
O
U
T
P
S
E
N
S
D
A
T
U
T
U
T
ADV/LD  
WRITE REGISTRY  
AND DATA COHERENCY  
CONTROL LOGIC  
A
R
E
G
I
S
T
E
R
S
MEMORY  
ARRAY  
E
B
U
F
DQs  
DQP  
DQP  
WRITE  
DRIVERS  
BW  
A
B
S
T
E
E
R
I
A
M
P
A
B
F
BW  
E
R
S
S
N
G
WE  
E
E
INPUT  
REGISTER 1  
INPUT  
REGISTER 0  
E
E
OE  
READ LOGIC  
CE1  
CE2  
CE3  
Sleep  
Control  
ZZ  
Note:  
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Document #: 38-05211 Rev. *C  
Revised April 16, 2004  
1234567...13

中文翻译

下载PDF

与CY7C1352F-250AC相关器件

型号 品牌 获取价格 描述 数据表
CY7C1352F-250AI CYPRESS

获取价格

 		4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Ar
CY7C1352G CYPRESS

获取价格

 		4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture
CY7C1352G_06 CYPRESS

获取价格

 		4-Mbit (256K x 18) Pipelined SRAM with NoBL⑩
CY7C1352G_12 CYPRESS

获取价格

 		4-Mbit (256 K × 18) Pipelined SRAM with NoBL
CY7C1352G_13 CYPRESS

获取价格

 		4-Mbit (256 K x 18) Pipelined SRAM with NoBLâ
CY7C1352G-133AXC CYPRESS

获取价格

 		4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture
CY7C1352G-133AXC INFINEON

获取价格

 		Synchronous SRAM
CY7C1352G-133AXI CYPRESS

获取价格

 		4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture
CY7C1352G-166AXC CYPRESS

获取价格

 		4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture
CY7C1352G-166AXI CYPRESS

获取价格

 		4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

与CY7C1352F-250AC相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证