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CY62168GE

更新时间： 2024-11-06 01:01:55
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赛普拉斯 - CYPRESS /
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19页 312K
描述
16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC)

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CY62168GE 数据手册

 浏览型号CY62168GE的Datasheet PDF文件第2页浏览型号CY62168GE的Datasheet PDF文件第3页浏览型号CY62168GE的Datasheet PDF文件第4页浏览型号CY62168GE的Datasheet PDF文件第5页浏览型号CY62168GE的Datasheet PDF文件第6页浏览型号CY62168GE的Datasheet PDF文件第7页 
CY62168G/CY62168GE MoBL®  
16-Mbit (2M words × 8 bits) Static RAM  
with Error-Correcting Code (ECC)  
16-Mbit (2M words  
× 8 bits) Static RAM with Error-Correcting Code (ECC)  
Devices with a single chip enable input are accessed by  
asserting the chip enable input (CE) LOW. Dual chip enable  
devices are accessed by asserting both chip enable inputs – CE1  
as LOW and CE2 as HIGH.  
Features  
■ Ultra-low standby power  
❐ Typical standby current: 5.5 A  
❐ Maximum standby current: 16 A  
Write to the device by taking Chip Enable 1 (CE1) LOW and  
Chip Enable 2 (CE2) HIGH and the Write Enable (WE) input  
LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written  
■ High speed: 45 ns/55 ns  
into the location specified on the address pins (A0 through A20).  
■ Embedded error-correcting code (ECC) for single-bit error  
correction  
Read from the device by taking Chip Enable 1 (CE1) and  
Output Enable (OE) LOW and Chip Enable 2 (CE2) HIGH while  
forcing Write Enable (WE) HIGH. Under these conditions, the  
contents of the memory location specified by the address pins  
will appear on the I/O pins.  
■ Widevoltage range: 1.65 V to2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V  
■ 1.0 V data retention  
■ Transistor-transistor logic (TTL) compatible inputs and outputs  
■ ERR pin to indicate 1-bit error detection and correction  
■ Available in Pb-free 48-ball VFBGA package  
The eight input and output pins (I/O0 through I/O7) are placed in  
a high impedance state when the device is deselected (CE1  
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a  
write operation is in progress (CE1 LOW and CE2 HIGH and WE  
LOW). See the Truth Table – CY62168G/CY62168GE on page  
14 for a complete description of read and write modes.  
Functional Description  
CY62168G and CY62168GE are high-performance CMOS  
low-power (MoBL) SRAM devices with embedded ECC. Both  
devices are offered in single and dual chip enable options and in  
multiple pin configurations. The CY62168GE device includes an  
error indication pin that signals a single-bit error-detection and  
correction event during a read cycle.  
On CY62168GE devices, the detection and correction of a single  
bit error in the accessed location is indicated by the assertion of  
the ERR output (ERR = HIGH) [1]  
.
The CY62168G and CY62168GE devices are available in a  
Pb-free 48-pin VFBGA package. The logic block diagrams are  
on page 2.  
For a complete list of related resources, click here.  
Product Portfolio  
Power Dissipation  
Features and Options  
(see Pin  
Operating ICC, (mA)  
Speed  
Product  
Range  
VCC Range (V)  
Standby, ISB2 (µA)  
(ns)  
Configurations  
section)  
f = fmax  
Typ[2]  
Max  
32  
Typ[2]  
7
Max  
26  
CY62168G(E)18 Single or dual Chip  
Industrial  
1.65 V–2.2 V  
2.2 V–3.6 V  
4.5 V–5.5 V  
55  
45  
29  
29  
Enables  
CY62168G(E)30  
36  
5.5  
16  
Optional ERR pin  
CY62168G(E)  
Notes  
1. This device does not support automatic write-back on error detection.  
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V = 1.8 V (for V range of 1.65 V–2.2 V), V = 3 V  
CC  
CC  
CC  
(for V range of 2.2 V–3.6 V), and V = 5 V (for V range of 4.5 V–5.5 V), T = 25 °C.  
CC  
CC  
CC  
A
Cypress Semiconductor Corporation  
Document Number: 001-84771 Rev. *I  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised December 22, 2017  
1234567...19

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