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CY62168GE30-45BVXI

更新时间： 2024-11-05 20:47:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
19页 312K
描述
Standard SRAM, 2MX8, 45ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48

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CY62168GE30-45BVXI 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：VFBGA,Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.8最长访问时间：45 ns
JESD-30 代码：R-PBGA-B48长度：8 mm
内存密度：16777216 bit内存集成电路类型：STANDARD SRAM
内存宽度：8功能数量：1
端子数量：48字数：2097152 words
字数代码：2000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：2MX8封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED座面最大高度：1 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.2 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：6 mmBase Number Matches：1

CY62168GE30-45BVXI 数据手册

 浏览型号CY62168GE30-45BVXI的Datasheet PDF文件第2页浏览型号CY62168GE30-45BVXI的Datasheet PDF文件第3页浏览型号CY62168GE30-45BVXI的Datasheet PDF文件第4页浏览型号CY62168GE30-45BVXI的Datasheet PDF文件第5页浏览型号CY62168GE30-45BVXI的Datasheet PDF文件第6页浏览型号CY62168GE30-45BVXI的Datasheet PDF文件第7页 
CY62168G/CY62168GE MoBL®  
16-Mbit (2M words × 8 bits) Static RAM  
with Error-Correcting Code (ECC)  
16-Mbit (2M words  
× 8 bits) Static RAM with Error-Correcting Code (ECC)  
Devices with a single chip enable input are accessed by  
asserting the chip enable input (CE) LOW. Dual chip enable  
devices are accessed by asserting both chip enable inputs – CE1  
as LOW and CE2 as HIGH.  
Features  
■ Ultra-low standby power  
❐ Typical standby current: 5.5 A  
❐ Maximum standby current: 16 A  
Write to the device by taking Chip Enable 1 (CE1) LOW and  
Chip Enable 2 (CE2) HIGH and the Write Enable (WE) input  
LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written  
■ High speed: 45 ns/55 ns  
into the location specified on the address pins (A0 through A20).  
■ Embedded error-correcting code (ECC) for single-bit error  
correction  
Read from the device by taking Chip Enable 1 (CE1) and  
Output Enable (OE) LOW and Chip Enable 2 (CE2) HIGH while  
forcing Write Enable (WE) HIGH. Under these conditions, the  
contents of the memory location specified by the address pins  
will appear on the I/O pins.  
■ Widevoltage range: 1.65 V to2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V  
■ 1.0 V data retention  
■ Transistor-transistor logic (TTL) compatible inputs and outputs  
■ ERR pin to indicate 1-bit error detection and correction  
■ Available in Pb-free 48-ball VFBGA package  
The eight input and output pins (I/O0 through I/O7) are placed in  
a high impedance state when the device is deselected (CE1  
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a  
write operation is in progress (CE1 LOW and CE2 HIGH and WE  
LOW). See the Truth Table – CY62168G/CY62168GE on page  
14 for a complete description of read and write modes.  
Functional Description  
CY62168G and CY62168GE are high-performance CMOS  
low-power (MoBL) SRAM devices with embedded ECC. Both  
devices are offered in single and dual chip enable options and in  
multiple pin configurations. The CY62168GE device includes an  
error indication pin that signals a single-bit error-detection and  
correction event during a read cycle.  
On CY62168GE devices, the detection and correction of a single  
bit error in the accessed location is indicated by the assertion of  
the ERR output (ERR = HIGH) [1]  
.
The CY62168G and CY62168GE devices are available in a  
Pb-free 48-pin VFBGA package. The logic block diagrams are  
on page 2.  
For a complete list of related resources, click here.  
Product Portfolio  
Power Dissipation  
Features and Options  
(see Pin  
Operating ICC, (mA)  
Speed  
Product  
Range  
VCC Range (V)  
Standby, ISB2 (µA)  
(ns)  
Configurations  
section)  
f = fmax  
Typ[2]  
Max  
32  
Typ[2]  
7
Max  
26  
CY62168G(E)18 Single or dual Chip  
Industrial  
1.65 V–2.2 V  
2.2 V–3.6 V  
4.5 V–5.5 V  
55  
45  
29  
29  
Enables  
CY62168G(E)30  
36  
5.5  
16  
Optional ERR pin  
CY62168G(E)  
Notes  
1. This device does not support automatic write-back on error detection.  
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V = 1.8 V (for V range of 1.65 V–2.2 V), V = 3 V  
CC  
CC  
CC  
(for V range of 2.2 V–3.6 V), and V = 5 V (for V range of 4.5 V–5.5 V), T = 25 °C.  
CC  
CC  
CC  
A
Cypress Semiconductor Corporation  
Document Number: 001-84771 Rev. *I  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised December 22, 2017  
 
 
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