CY62168EV30 MoBL®
16-Mbit (2M x 8) Static RAM
toggling. Placing the device into standby mode reduces power
consumption by more than 99% when deselected (Chip
Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW). The input
and output pins (IO0 through IO7) are placed in a high
impedance state when: the device is deselected (Chip Enable
1 (CE1) HIGH or Chip Enable 2 (CE2) LOW), outputs are
disabled (OE HIGH), or a write operation is in progress (Chip
Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and WE
LOW).
Features
• Very high speed: 45 ns
• Wide voltage range: 2.20V – 3.60V
• Ultra low standby power
— Typical standby current: 1.5 µA
— Maximum standby current: 12 µA
• Ultra low active power
Write to the device by taking Chip Enable 1 (CE1) LOW and
Chip Enable 2 (CE2) HIGH and the Write Enable (WE) input
LOW. Data on the eight IO pins (IO0 through IO7) is then
written into the location specified on the address pins (A0
through A20).
— Typical active current: 2.2 mA @ f = 1 MHz
• Easy memory expansion with CE1, CE2 and OE features
• Automatic power down when deselected
• CMOS for optimum speed/power
Read from the device by taking Chip Enable 1 (CE1) and
Output Enable (OE) LOW and Chip Enable 2 (CE2) HIGH
while forcing Write Enable (WE) HIGH. Under these condi-
tions, the contents of the memory location specified by the
address pins will appear on the IO pins.
• Offered in Pb-free 48-ball FBGA package. For Pb-free
48-pin TSOP I package, refer to CY62167EV30 data sheet.
Functional Description[1]
The CY62168EV30 is a high performance CMOS static RAM
organized as 2M words by 8 bits. This device features
advanced circuit design to provide an ultra low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption by 90% when addresses are not
The eight input and output pins (IO0 through IO7) are placed
in a high impedance state when the device is deselected (CE1
LOW and CE2 HIGH), the outputs are disabled (OE HIGH), or
a write operation is in progress (CE1 LOW and CE2 HIGH and
WE LOW). See the “Truth Table” on page 8 for a complete
description of read and write modes.
Logic Block Diagram
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
IO
0
DATA IN DRIVERS
IO
1
IO
2
2M x 8
IO
3
IO
IO
IO
IO
ARRAY
4
5
6
7
A
A
A
A
9
10
11
12
CE
CE
1
2
POWER
DOWN
COLUMN DECODER
WE
OE
Note
1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.
Cypress Semiconductor Corporation
Document #: 001-07721 Rev. *B
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 07, 2007
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