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CY62158DVL-55BVI PDF预览

CY62158DVL-55BVI

更新时间： 2024-09-16 14:48:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
10页 319K
描述
Standard SRAM, 1MX8, 55ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, BGA-48

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CY62158DVL-55BVI 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：6 X 8 MM, 1 MM HEIGHT, BGA-48针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.86
Is Samacsys：N最长访问时间：55 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
JESD-609代码：e0长度：8 mm
内存密度：8388608 bit内存集成电路类型：STANDARD SRAM
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：48
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：1MX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装等效代码：BGA48,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：2.5/3.3 V认证状态：Not Qualified
座面最大高度：1 mm最大待机电流：0.00001 A
最小待机电流：1.5 V子类别：SRAMs
最大压摆率：0.02 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.2 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：TIN LEAD
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
宽度：6 mmBase Number Matches：1

CY62158DVL-55BVI 数据手册

 浏览型号CY62158DVL-55BVI的Datasheet PDF文件第2页浏览型号CY62158DVL-55BVI的Datasheet PDF文件第3页浏览型号CY62158DVL-55BVI的Datasheet PDF文件第4页浏览型号CY62158DVL-55BVI的Datasheet PDF文件第5页浏览型号CY62158DVL-55BVI的Datasheet PDF文件第6页浏览型号CY62158DVL-55BVI的Datasheet PDF文件第7页 
CY62158DV  
MoBL  
PRELIMINARY  
8 Mb (1024K x 8) MoBLStatic RAM  
This is ideal for providing More Battery Life™ (MoBL) in  
portable applications such as cellular telephones. The device  
also has an automatic power-down feature that significantly  
reduces power consumption. The device can be put into  
standby mode reducing power consumption by more than 99%  
when deselected (CE1 HIGH or CE2 LOW).  
Features  
• Very high speed: 55 ns  
— Wide voltage range: 2.20V – 3.60V  
• Ultra-low active power  
— Typical active current:1.5 mA @ f = 1 MHz  
— Typical active current: 12 mA @ f = fmax(55-ns speed)  
• Ultra-low standby power  
Writing to the device is accomplished by taking Chip Enable 1  
(CE1) and Write Enable (WE) inputs LOW and Chip Enable 2  
(CE2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is  
then written into the location specified on the address pins (A0  
through A19).  
• Easy memory expansion with CE1, CE2, and OE fea-  
tures  
Reading from the device is accomplished by taking Chip  
Enable 1 (CE1) and Output Enable (OE) LOW and Chip  
Enable 2 (CE2) HIGH while forcing Write Enable (WE) HIGH.  
Under these conditions, the contents of the memory location  
specified by the address pins will appear on the I/O pins.  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE1  
LOW and CE2 HIGH), the outputs are disabled (OE HIGH), or  
during a write operation (CE1 LOW and CE2 HIGH and WE  
LOW). See the truth table for a complete description of read  
and write modes.  
• Automatic power-down when deselected  
• CMOS for optimum speed/power  
• Packages offered in a 48-ball BGA, 48-pin TSOPI, and  
44-pin TSOPII  
Functional Description[1]  
The CY62158DV is a high-performance CMOS static RAMs  
organized as 1024K words by 8 bits. This device features  
advanced circuit design to provide ultra-low active current.  
Logic Block Diagram  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
Data in Drivers  
A0  
A1  
A2  
A3  
A4  
1
2
A
A5  
A6  
3
4
5
1024K x 8  
A7  
ARRAY  
A98  
A10  
A11  
A12  
6
7
POWER  
DOWN  
COLUMN  
CE  
CE  
1
2
DECODER  
I/O  
WE  
OE  
Note:  
1. For best practice recommendations, please refer to the Cypress application note entitled System Design Guidelines, available at http://www.cypress.com.  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Document #: 38-05391 Rev. *B  
Revised January 24, 2004  
1234567...10

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