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CY62162G30-45BGXI PDF预览

CY62162G30-45BGXI

更新时间: 2023-09-03 20:32:21
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器内存集成电路
页数 文件大小 规格书
21页 544K
描述
Asynchronous SRAM

CY62162G30-45BGXI 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HBGA,Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.8最长访问时间:45 ns
JESD-30 代码:R-PBGA-B119长度:22 mm
内存密度:16777216 bit内存集成电路类型:STANDARD SRAM
内存宽度:32功能数量:1
端子数量:119字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX32封装主体材料:PLASTIC/EPOXY
封装代码:HBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, HEAT SINK/SLUG并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:2.4 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.2 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

CY62162G30-45BGXI 数据手册

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Please note that Cypress is an Infineon Technologies Company.  
The document following this cover page is marked as “Cypress” document as this is the  
company that originally developed the product. Please note that Infineon will continue  
to offer the product to new and existing customers as part of the Infineon product  
portfolio.  
Continuity of document content  
The fact that Infineon offers the following product as part of the Infineon product  
portfolio does not lead to any changes to this document. Future revisions will occur  
when appropriate, and any changes will be set out on the document history page.  
Continuity of ordering part numbers  
Infineon continues to support existing part numbers. Please continue to use the  
ordering part numbers listed in the datasheet for ordering.  
www.infineon.com  

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