CS3N30 B23H
R
○
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Rating
Typ.
--
Parameter
Test Conditions
Symbol
Units
Min.
300
--
Max.
VGS=0V, ID=250µA
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
V
VDSS
--
--
ID=250uA,Reference25℃
0.5
V/℃
ΔBVDSS/ΔTJ
VDS =300V, VGS= 0V,
Ta = 25℃
VDS =240V, VGS= 0V,
Ta = 125℃
--
--
1
Drain to Source Leakage Current
µA
IDSS
100
100
-100
VDS =0V, VGS= 30V
VDS =0V,VGS =-30V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
nA
nA
IGSS(F)
IGSS(R)
--
--
--
--
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
--
Typ. Max.
VGS=10V,ID=1.5A
Drain-to-Source On-Resistance
Gate Threshold Voltage
RDS(ON)
VGS(TH)
2.2
3
Ω
VDS = VGS, ID = 250µA
2.0
4.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Rating
Typ.
1
Parameter
Test Conditions
Symbol
Units
S
Min.
Max.
VDS=15V, ID =1.5A
Forward Transconductance
Input Capacitance
gfs
Ciss
Coss
Crss
--
--
--
120
21
VGS = 0V VDS = 25V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
4.8
Resistive Switching Characteristics
Rating
Typ.
8
Parameter
Test Conditions
Symbol
Units
ns
Min.
--
Max.
--
Turn-on Delay Time
Rise Time
td(ON)
tr
td(OFF)
tf
--
15
--
ID =3A VDD = 150V
VGS = 10V RG =10Ω
Turn-Off Delay Time
Fall Time
--
25
--
--
7
--
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Qg
--
4.2
0.9
1.8
ID =3A VDD =240V
VGS = 10V
Qgs
Qgd
--
nC
--
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2015V01