Datasheet > CS3N80FA9

CS3N80FA9

更新时间： 2024-03-03 10:10:58

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	827K
描述
TO-220F

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CS3N80FA9 数据手册

Silicon N-Channel Power MOSFET

CS3N80F A9

○

General Description：

V_DSS

800

CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs,

is obtained by the self-aligned planar Technology which reduce

the conduction loss, improve switching performance and

enhance the avalanche energy. The transistor can be used in

various power switching circuit for system miniaturization and

higher efficiency. The package form is TO-220F, which accords

with the RoHS standard.

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

4.0

Ω

Features：

l Fast Switching

l Low ON Resistance(Rdson≤4.8Ω)

l Low Gate Charge (Typical Data:18nC)

l Low Reverse transfer capacitances(Typical:7pF)

l 100% Single Pulse avalanche energy Test

Applications：

Automotive、DC Motor Control and Class D Amplifier.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

800

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

1.9

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

120

V/ns

E_AS

5.0

dv/dt

0.24

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELEC TRONICS CO. , LTD.

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