Silicon N-Channel Power MOSFET
R
○
CS3N40 A23
General Description:
VDSS
400
V
A
CS3N40 A23, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
SOT-223, which accords with the RoHS standard.
Features:
ID
2
PD (TA=25℃)
RDS(ON)TYP
2.5
2.8
W
Ω
l Fast Switching
l Low ON Resistance(Rdson≤3.4Ω)
l Low Gate Charge (Typical Data:5nC)
l Low Reverse transfer capacitances(Typical:4.5pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of LCD Power and adaptor.
Absolute(TA= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
400
V
A
Continuous Drain Current
2
ID
Continuous Drain Current Ta = 100 °C
Pulsed Drain Current
1.45
A
a1
8
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
50
mJ
V/ns
W
EAS
a3
5
2.5
dv/dt
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
0.02
W/℃
℃
TJ,Tstg
150,–55 to 150
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
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2019V01