Datasheet > CS3N40A23

CS3N40A23

更新时间： 2024-03-03 10:09:45

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	245K
描述
SOT-223-3L

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CS3N40A23 数据手册

Silicon N-Channel Power MOSFET

○

CS3N40 A23

General Description：

V_DSS

400

CS3N40 A23, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

SOT-223, which accords with the RoHS standard.

Features：

I_D

P_D(T_A=25℃)

R_DS(ON)TYP

2.5

2.8

Ω

l Fast Switching

l Low ON Resistance(Rdson≤3.4Ω)

l Low Gate Charge (Typical Data:5nC)

l Low Reverse transfer capacitances(Typical:4.5pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of LCD Power and adaptor.

Absolute（T_A= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

400

Continuous Drain Current

I_D

Continuous Drain Current T_a= 100 °C

Pulsed Drain Current

1.45

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

V/ns

E_AS

2.5

dv/dt

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

0.02

W/℃

℃

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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