Datasheet > CS3N40ATH

CS3N40ATH

更新时间： 2024-03-03 10:10:49

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华润微 - CRMICRO		/
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10页	231K
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SOT-89

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CS3N40ATH 数据手册

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Silicon N-Channel Power MOSFET

CS3N40 ATH

General Description：

V_DSS

400

CS3N40 ATH, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

SOT-89, which accords with the RoHS standard.

Features：

I_D

P_D(T_A=25℃)

R_DS(ON)TYP

1.25

2.8

Ω

l Fast Switching

l Low ON Resistance(Rdson≤3.4Ω)

l Low Gate Charge (Typical Data:5nC)

l Low Reverse transfer capacitances(Typical:4.5pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of LCD Power and adaptor.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

400

Continuous Drain Current

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

I_D

1.8

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

E_AS

1.25

dv/dt

Power Dissipation(T_A=25℃)

P_D

Derating Factor above 25°C

0.01

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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