Datasheet > CS3N80A3

CS3N80A3

更新时间： 2024-03-03 10:09:19

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	618K
描述
TO-251

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CS3N80A3 数据手册

Silicon N-Channel Power MOSFET

○

CS3N80 A3

General Description

：

V_DSS

800

CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is

obtained by the self-aligned planar Technology which reduce the

conduction loss, improve switching performance and enhance

the avalanche energy. The transistor can be used in various

power switching circuit for system miniaturization and

higher efficiency. The package form is TO-251, which accords with

the RoHS standard.

I_D

P_D(T_C=25

R_DS(ON)Typ

℃

)

4.0

Ω

Features

：

l Fast Switching

l Low ON Resistance(Rdson≤4.8Ω)

l Low Gate Charge (Typical Data:18nC)

l Low Reverse transfer capacitances(Typical:7pF)

l 100% Single Pulse avalanche energy Test

Applications

：

Automotive

、

DC Motor Control and Class D Amplifier.

Tc= 25 unless otherwise specified）：

Parameter

Absolute

Symbol

V_DSS

（

℃

Rating

Units

Drain-to-Source Voltage

800

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

1.9

I_DM

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

120

E_AS

E_AR

1.5

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

5.0

V/ns

dv/dt

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

0.6

℃

T_J

，

T_stg

150

，

–55 to 150

300

℃

T_L

℃

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