Datasheet > CS3N30B23H

CS3N30B23H

更新时间： 2024-04-09 18:58:51

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	246K
描述
SOT-223

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数据手册

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CS3N30B23H 数据手册

CS3N30 B23H

○

1.15

1.1

1.05

0.95

0.9

0.85

0.8

0.95

0.9

VGS=0V

ID=250μA

0.75

0.7

VGS=0V

ID=250μA

0.65

-75 -50 -25

25 50 75 100 125 150 175

Tj, Junction temperature , C

Figure 11 Typical Theshold Voltage vs Junction Temperature

-55 -30

-5

120 145 170

Tj, Junction temperature , C

Figure 12 Typical Breakdown Voltage vs Junction Temperature

10000

1000

100

Ciss

Coss

Crss

V_GS=0V , f=1MHz

Ciss=Cgs+Cgd

Coss=Cds+Cgd

Crss=Cgd

I_D=3A

0.1

100

Qg , Total Gate Charge , nC

Vds , Drain - Source Voltage , Volts

Figure 14 Typical Gate Charge vs Gate to Source Voltage

Figure 13 Typical Capacitance vs Drain to Source Voltage

100

If R=0: t_AV=(L* I_AS) / (1.38V_DSS-V_DD

If R≠0: t_AV=(L/R) In[IAS*R/ (1.38V_DSS-V_DD)+1]

R equals total Series resistance of Drain circuit

)

STARTING Tj = 25℃

STARTING Tj = 150℃

+150℃

+25℃

-55℃

0.1

1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01

tav,Time in Avalanche,Seconds

1.00E+00

0.2

0.4

0.6

0.8

1.2

Vsd , Source - Drain Voltage , Volts

Figure 16 Unclamped Inductive Switching Capability

Figure 15 Typical Body Diode Transfer Characteristics

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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