CS3N30 B23H
R
○
1.15
1.1
1.1
1.05
1
1.05
1
0.95
0.9
0.85
0.8
0.95
0.9
VGS=0V
ID=250μA
0.75
0.7
VGS=0V
ID=250μA
0.65
-75 -50 -25
0
25 50 75 100 125 150 175
Tj, Junction temperature , C
Figure 11 Typical Theshold Voltage vs Junction Temperature
-55 -30
-5
20
45
70
95
120 145 170
Tj, Junction temperature , C
Figure 12 Typical Breakdown Voltage vs Junction Temperature
12
10000
10
8
1000
100
10
Ciss
6
Coss
Crss
4
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
2
ID=3A
0
1
0
1
2
3
4
5
0.1
1
10
100
Qg , Total Gate Charge , nC
Vds , Drain - Source Voltage , Volts
Figure 14 Typical Gate Charge vs Gate to Source Voltage
Figure 13 Typical Capacitance vs Drain to Source Voltage
100
10
1
8
7
6
5
4
3
2
1
0
If R=0: tAV =(L* IAS) / (1.38VDSS-VDD
If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
)
STARTING Tj = 25℃
STARTING Tj = 150℃
+150℃
+25℃
-55℃
0.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
tav,Time in Avalanche,Seconds
1.00E+00
0
0.2
0.4
0.6
0.8
1
1.2
Vsd , Source - Drain Voltage , Volts
Figure 16 Unclamped Inductive Switching Capability
Figure 15 Typical Body Diode Transfer Characteristics
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
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2015V01