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CS3N30B23H PDF预览

CS3N30B23H

更新时间: 2024-10-29 17:00:47
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CS3N30B23H 数据手册

 浏览型号CS3N30B23H的Datasheet PDF文件第3页浏览型号CS3N30B23H的Datasheet PDF文件第4页浏览型号CS3N30B23H的Datasheet PDF文件第5页浏览型号CS3N30B23H的Datasheet PDF文件第7页浏览型号CS3N30B23H的Datasheet PDF文件第8页浏览型号CS3N30B23H的Datasheet PDF文件第9页 
CS3N30 B23H  
R
1.15  
1.1  
1.1  
1.05  
1
1.05  
1
0.95  
0.9  
0.85  
0.8  
0.95  
0.9  
VGS=0V  
ID=250μA  
0.75  
0.7  
VGS=0V  
ID=250μA  
0.65  
-75 -50 -25  
0
25 50 75 100 125 150 175  
Tj, Junction temperature , C  
Figure 11 Typical Theshold Voltage vs Junction Temperature  
-55 -30  
-5  
20  
45  
70  
95  
120 145 170  
Tj, Junction temperature , C  
Figure 12 Typical Breakdown Voltage vs Junction Temperature  
12  
10000  
10  
8
1000  
100  
10  
Ciss  
6
Coss  
Crss  
4
VGS=0V , f=1MHz  
Ciss=Cgs+Cgd  
Coss=Cds+Cgd  
Crss=Cgd  
2
ID=3A  
0
1
0
1
2
3
4
5
0.1  
1
10  
100  
Qg , Total Gate Charge , nC  
Vds , Drain - Source Voltage , Volts  
Figure 14 Typical Gate Charge vs Gate to Source Voltage  
Figure 13 Typical Capacitance vs Drain to Source Voltage  
100  
10  
1
8
7
6
5
4
3
2
1
0
If R=0: tAV =(L* IAS) / (1.38VDSS-VDD  
If R0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]  
R equals total Series resistance of Drain circuit  
)
STARTING Tj = 25℃  
STARTING Tj = 150℃  
+150℃  
+25℃  
-55℃  
0.1  
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01  
tav,Time in Avalanche,Seconds  
1.00E+00  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
Vsd , Source - Drain Voltage , Volts  
Figure 16 Unclamped Inductive Switching Capability  
Figure 15 Typical Body Diode Transfer Characteristics  
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2015V01