Silicon N-Channel Power MOSFET
CS3N90 A3H1-G
R
○
General Description:
VDSS
900
3
V
A
CS3N90 A3H1-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
Features:
ID
PD(TC=25℃)
RDS(ON)Typ
75
5
W
Ω
Fast Switching
Low ON Resistance(Rdson≤5.5Ω)
Low Gate Charge (Typical Data:16nC)
Low Reverse transfer capacitances(Typical:6.5pF)
100% Single Pulse avalanche energy Test
Applications:
Automotive、DC Motor Control and Class D Amplifier.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
900
V
A
Continuous Drain Current
3
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
1.9
A
a1
12
A
IDM
Gate-to-Source Voltage
VGS
±30
V
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
125
mJ
V/ns
W
EAS
a3
5.0
dv/dt
75
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
0.6
150,–55 to 150
300
W/℃
℃
TJ,Tstg
TL
℃
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2017V01