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CS3N40A4H PDF预览

CS3N40A4H

更新时间: 2024-10-29 17:01:55
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 195K
描述
TO-252

CS3N40A4H 数据手册

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Silicon N-Channel Power MOSFET  
R
CS3N40 A4H  
General Description  
VDSS  
400  
V
A
CS3N40 A4H, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is  
TO-252, which accords with the RoHS standard.  
Features  
ID  
3
PD (TC=25)  
RDS(ON)TYP  
30  
2.8  
W
l Fast Switching  
l Low ON Resistance(Rdson3.4)  
l Low Gate Charge (Typical Data:5nC)  
l Low Reverse transfer capacitances(Typical:4.5pF)  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of LCD Power and adaptor.  
AbsoluteTc= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
400  
V
A
Continuous Drain Current  
3
ID  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
1.8  
A
a1  
12  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Avalanche Energy ,Repetitive  
Avalanche Current  
50  
mJ  
mJ  
A
EAS  
a1  
6.4  
EAR  
a1  
1.2  
IAR  
a3  
Peak Diode Recovery dv/dt  
Power Dissipation  
5
V/ns  
W
dv/dt  
30  
0.24  
PD  
Derating Factor above 25°C  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
W/℃  
TJTstg  
15055 to 150  
300  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  
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