Silicon N-Channel Power MOSFET
CS3N80 A3R
R
○
General Description:
VDSS
800
V
A
CS3N80 A3R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
ID
3
PD(TC=25℃)
RDS(ON)Typ
130
3.7
W
Ω
Features:
l Fast Switching
l Low ON Resistance(Rdson≤4.8Ω)
l Low Gate Charge (Typical Data: 17.3nC)
l Low Reverse transfer capacitances(Typical: 4.3pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tj= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
800
V
A
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
3
ID
1.9
A
a1
12
A
IDM
VGS
±30
V
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
153
mJ
V/ns
W
EAS
a3
5.0
dv/dt
Power Dissipation TC = 25 °C
Derating Factor above 25°C
130
1.04
PD
W/℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
TJ,Tstg
150,–55 to 150
300
TL
℃
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2020V01