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CS3N50A4R PDF预览

CS3N50A4R

更新时间: 2024-10-29 15:19:07
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 758K
描述
TO-252

CS3N50A4R 数据手册

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Silicon N-Channel Power MOSFET  
CS3N50 A4R  
R
General Description  
VDSS  
500  
V
A
CS3N50 A4R, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned Technology which  
reduce the conduction loss, improve switching performance and  
enhance the avalanche energy. The transistor can be used in  
various power switching circuit for system miniaturization and  
higher efficiency. The package form is TO-252, which accords  
with the RoHS standard.  
ID  
3
PD(TC=25)  
RDS(ON)Typ  
35  
2.5  
W
Features  
Superior switching performance  
Low on resistance(Rdson3)  
Low gate charge (Typical Data:8.8nC)  
Low reverse transfer capacitances(Typical:2.6pF)  
100% Single pulse avalanche energy test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTc= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
500  
V
A
Continuous Drain Current  
3
ID  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
1.8  
A
a1  
12  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation  
95  
mJ  
V/ns  
W
EAS  
a3  
5.0  
dv/dt  
35  
0.28  
PD  
Derating Factor above 25°C  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
W/℃  
TJTstg  
15055 to 150  
300  
TL  
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