Datasheet > CS3N50A4R

CS3N50A4R

更新时间： 2024-03-03 10:10:13

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	758K
描述
TO-252

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CS3N50A4R 数据手册

Silicon N-Channel Power MOSFET

CS3N50 A4R

○

General Description：

V_DSS

500

CS3N50 A4R, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned Technology which

reduce the conduction loss, improve switching performance and

enhance the avalanche energy. The transistor can be used in

various power switching circuit for system miniaturization and

higher efficiency. The package form is TO-252, which accords

with the RoHS standard.

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

2.5

Ω

Features：

 Superior switching performance



Low on resistance(Rdson≤3Ω)

 Low gate charge (Typical Data:8.8nC)

 Low reverse transfer capacitances(Typical:2.6pF)

 100% Single pulse avalanche energy test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

500

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

1.8

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

V/ns

E_AS

5.0

dv/dt

0.28

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

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