Silicon N-Channel Power MOSFET
CS3N50 A4R
R
○
General Description:
VDSS
500
V
A
CS3N50 A4R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned Technology which
reduce the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-252, which accords
with the RoHS standard.
ID
3
PD(TC=25℃)
RDS(ON)Typ
35
2.5
W
Ω
Features:
Superior switching performance
Low on resistance(Rdson≤3Ω)
Low gate charge (Typical Data:8.8nC)
Low reverse transfer capacitances(Typical:2.6pF)
100% Single pulse avalanche energy test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
500
V
A
Continuous Drain Current
3
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
1.8
A
a1
12
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
95
mJ
V/ns
W
EAS
a3
5.0
dv/dt
35
0.28
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W/℃
℃
TJ,Tstg
150,–55 to 150
300
TL
℃
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10
2017V01