CRTK140P03L
Trench P-MOSFET -30V, 10mΩ, -35A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Fig 1: Output Characteristics
Fig 2: Transfer Characteristics
100
100
80
60
40
20
0
VGS=-10V
VGS=-7V
VGS=-4.5V
80
60
40
20
0
VDS=-5V
VGS=-3.5V
150°C
VGS=-3V
VGS=2.5V
25°C
0
1
2
3
4
5
-VDS (V)
1
2
3
4
5
6
-VGS (V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
30
55
45
35
25
15
5
ID=-14A
24
18
12
6
VGS=-4.5V
VGS=-10V
150°C
25°C
0
0
20
40
60
80
100
2
3
4
5
6
7
8
9
10
-ID (A)
-VGS (V)
Fig 6: Capacitance Characteristics
Fig 5: Rds(on) vs. Temperature
10000
1000
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS=-10V
ID=-14A
VGS=0V
f=1MHz
C iss
Coss
Crss
10
0
6
12
18
24
30
-50
-25
0
25
50
75
100 125 150 175
Tj - Junction Temperature (°C)
-VDS (V)
Rev2.0
©China Resources Microelectronics (Chongqing) Limited
Page 4