Datasheet > CPH5801

CPH5801

更新时间： 2024-09-09 22:33:07

品牌	Logo	应用领域
三洋 - SANYO		转换器
页数	文件大小	规格书
5页	57K
描述
DC/DC Converter Applications

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技术参数
数据手册

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CPH5801 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G5
针数：	5	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	1.4 A	最大漏极电流 (ID)：	1.4 A
最大漏源导通电阻：	0.26 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G5	元件数量：	1
端子数量：	5	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.9 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

CPH5801 数据手册

Ordering number:EN6427

MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

CPH5801

DC/DC Converter Applications

Features

Package Dimensions

unit:mm

· The CPH5801 composite device consists of follow-

ing two devices to facilitate high-density mounting.

One is an N-channel MOSFET that features low ON

resistance, high-speed switching, and low driving

voltage. The other is a shottky barrier diode that

features short reverse recovery time and low forward

voltage.

2171

[CPH5801]

2.9

0.15

0.05

· Each device incorporated in the CPH5801 is equiva-

lent to the 2SK3119 and to the SBS005, respectively.

0.95

0.4

1 : Cathode

2 : Drain

3 : Gate

4 : Source

5 : Anode

SANYO : CPH5

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

±10

1.4

DSS

GSS

Drain Current (pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

[SBD]

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (600mm²×0.8mm) 1unit

5.6

Tch

0.9

˚C

150

Tstg

–55 to +125

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Surge Voltage

Average Output Current

Surge Current

RRM

RSM

50Hz sine wave, 1 cycle

FSM

Junction Temperature

Storage Temperature

–55 to +125

˚C

Tstg

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

30300TS (KOTO) TA-2491 No.6427–1/5

12 3 4 5

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