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CP753V_10 PDF预览

CP753V_10

更新时间: 2024-10-28 09:30:11
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 408K
描述
Small Signal Transistors PNP - High Current Transistor Chip

CP753V_10 数据手册

 浏览型号CP753V_10的Datasheet PDF文件第2页 
PROCESS CP753V  
Small Signal Transistors  
PNP - High Current Transistor Chip  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
66 x 66 MILS  
Die Thickness  
7.1 MILS  
Base Bonding Pad Area  
Emitter 1 Bonding Pad Area  
Emitter 2 Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
7.9 x 7.9 MILS  
7.9 x 9.5 MILS  
7.9 x 9.5 MILS  
Al-Si - 30,000Å  
Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å  
GEOMETRY  
GROSS DIE PER 5 INCH WAFER  
3,878  
PRINCIPAL DEVICE TYPES  
CZT953  
R2 (22-March 2010)  
www.centralsemi.com  

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