Datasheet > CP776-CWDM305P

CP776-CWDM305P

更新时间： 2024-11-18 14:55:15

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	320K
描述
5.3A,30V Bare die,33.070 X 23.620 mils,MOSFET

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CP776-CWDM305P 数据手册

CP776-CWDM305P

P-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP776-CWDM305P is a silicon P-Channel MOSFET designed for high speed pulsed

ampliﬁer and driver applications.

MECHANICAL SPECIFICATIONS:

Die Size

33 x 24 MILS

7.0 MILS

Die Thickness

Gate Bonding Pad Size

Source Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

6.5 x 6.5 MILS

30 x 20 MILS

Al – 40,000Å

Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å

2.36 MILS

8 INCHES

Gross Die Per Wafer

57,000

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Operating and Storage Junction Temperature

5.3

21.2

T , T

-55 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=20V, V =0

100

GSSF GSSR

=30V, V =0

1.0

μA

DSS

=0, I =250μA

DSS

GS(th)

=V , I =250μA

1.0

3.0

GS DS

=10V, I =2.7A

0.066

0.077

0.072

0.083

DS(ON)

=5.0V, I =2.7A

DS(ON)

=5.0V, I =5.3A

=10V, V =0, f=1.0MHz

590

150

7.0

2.1

2.5

rss

iss

=10V, V =0, f=1.0MHz

500

=10V, V =0, f=1.0MHz

oss

=15V, V =5.0V, I =5.3A

4.7

g(tot)

=15V, V =5.0V, I =5.3A

1.4

=15V, V =5.0V, I =5.3A

1.7

=15V, I =5.3A, R =10Ω

7.0

off

=15V, I =5.3A, R =10Ω

8.0

R0 (28-March 2019)

12 3

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