Datasheet > CP784X-CXT7090L

CP784X-CXT7090L

更新时间： 2024-11-18 14:55:03

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	593K
描述
40V,3A,1.2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A)

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技术参数
数据手册

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CP784X-CXT7090L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84

CP784X-CXT7090L 数据手册

CP784X-CXT7090L

PNP - Low V_CE(SAT)Transistor Die

3.0 Amp, 15 Volt

www.centralsemi.com

The CP784X-CXT7090L die is a low V

converters.

silicon PNP power transistor designed for DC-DC

CE(SAT)

MECHANICAL SPECIFICATIONS:

Die Size

39.8 x 39.8 MILS

Die Thickness

5.9 MILS

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

7.8 x 7.8 MILS

Al-Si – 30,000Å

Au-As – 12,000Å

1.96 MILS

5 INCHES

Gross Die Per Wafer

10,823

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Peak Collector Current

3.0

5.0

Operating and Storage Junction Temperature

-65 to +150

°C

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=30V

100

CBO

=4.0V

100

EBO

I =100µA

CBO

CEO

I =10mA

I =100µA

5.0

EBO

I =500mA, I =5.0mA

250

450

750

1.0

CE(SAT)

BE(SAT)

I =1.0A, I =10mA

I =2.0A, I =50mA

I =1.0A, I =10mA

=2.0V, I =10mA

300

250

200

150

100

800

=2.0V, I =500mA

=2.0V, I =1.0A

=2.0V, I =2.0A

=5V, I =50mA, f=50MHz

MHz

R0 (29-August 2018)

12 3 4

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