Datasheet > CP788X-2N3963

CP788X-2N3963

更新时间： 2024-11-20 17:00:59

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	448K
描述
80V,200mA,360mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A)

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CP788X-2N3963 数据手册

CP788X-2N3963

PNP - General Purpose Transistor Die

www.centralsemi.com

The CP788X-2N3963 is a silicon PNP transistor designed for general purpose applications.

MECHANICAL SPECIFICATIONS:

Die Size

13.7 x 13.7 MILS

5.9 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

4.0 x 4.0 MILS

5.5 x 5.5 MILS

Al-Si – 17,000Å

Au – 9,000Å

1.8 MILS

5 INCHES

Gross Die Per Wafer

91,469

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Operating and Storage Junction Temperature

200

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=70V

=4.0V

CBO

CES

EBO

I =10μA

6.0

CBO

CES

I =10μA

I =5.0mA

CEO

EBO

I =10μA

I =10mA, I =0.5mA

0.25

0.40

0.90

0.95

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =0.5mA

I =50mA, I =5.0mA

=5.0V, I =1.0μA

100

=5.0V, I =10μA

300

450

=5.0V, I =100μA

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =50mA

R0 (1-May 2019)

12 3 4

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