Datasheet > CP792V-2N3251

CP792V-2N3251

更新时间： 2024-11-20 17:01:47

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	862K
描述
40V,200mA,360mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)

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CP792V-2N3251 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

CP792V-2N3251 数据手册

CP792V-2N3251

PNP - General Purpose Transistor Die

0.2 Amp, 40 Volt

www.centralsemi.com

The CP792V-2N3251 is a silicon PNP transistor designed for general purpose applications.

MECHANICAL SPECIFICATIONS:

Die Size

11 x 11 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.74 x 3.74 MILS

Al – 30,000Å

Au – 18,000Å

1.5 MILS

4 INCHES

Gross Die Per Wafer

93,826

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Operating and Storage Junction Temperature

200

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

=40V, V =3.0V

MIN

MAX

UNITS

CEV

I =10μA

CBO

CEO

I =10mA

I =10μA

5.0

EBO

I =10mA, I =1.0mA

0.25

0.50

0.90

1.20

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

0.60

I =50mA, I =5.0mA

=1.0V, I =0.1mA

=1.0V, I =1.0mA

=1.0V, I =10mA

100

300

=1.0V, I =50mA

=20V, I =10mA, f=100MHz

300

MHz

=10V, I =0, f=100kHz

6.0

8.0

=1.0V, I =0, f=100kHz

R0 (25-August 2016)

12 3 4 5

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