Datasheet > CP788X-2N3811

CP788X-2N3811

更新时间： 2024-11-20 17:02:15

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	916K
描述
60V,50mA,500mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A)

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CP788X-2N3811 数据手册

CP788X-2N3811

PNP - General Purpose Transistor Die

www.centralsemi.com

The CP788X-2N3811 is a silicon PNP transistor designed for general purpose applications.

MECHANICAL SPECIFICATIONS:

Die Size

13.7 x 13.7 MILS

5.9 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

4.0 x 4.0 MILS

5.5 x 5.5 MILS

Al-Si – 17,000Å

Au – 9,000Å

1.8 MILS

5 INCHES

Gross Die Per Wafer

91,469

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

5.0

Emitter-Base Voltage

Continuous Collector Current

Operating and Storage Junction Temperature

°C

T , T

stg

-65 to +150

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=50V

CBO

=4.0V

EBO

I =10μA

CBO

CEO

I =10mA

I =10μA

5.0

EBO

I =100μA, I =10μA

0.20

0.25

0.70

0.80

0.70

CE(SAT)

BE(SAT)

BE(ON)

I =1.0mA, I =100μA

I =100μA, I =10μA

I =1.0mA, I =100μA

=5.0V, I =100ꢀA

=5.0V, I =1.0ꢀA

=5.0V, I =10ꢀA

225

300

250

=5.0V, I =100ꢀA

900

=5.0V, I =500ꢀA

=5.0V, I =1.0mA

=5.0V, I =10mA

R0 (23-August 2016)

12 3 4 5

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