Datasheet > CP788X-2N5087

CP788X-2N5087

更新时间： 2024-11-18 17:00:59

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	840K
描述
50V,50mA,625mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A)

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CP788X-2N5087 数据手册

CP788X-2N5087

PNP - General Purpose Transistor Die

www.centralsemi.com

The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications.

MECHANICAL SPECIFICATIONS:

Die Size

13.7 x 13.7 MILS

5.9 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

4.0 x 4.0 MILS

5.5 x 5.5 MILS

Al-Si – 17,000Å

Au – 9,000Å

1.8 MILS

5 INCHES

Gross Die Per Wafer

91,469

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

3.0

Emitter-Base Voltage

Continuous Collector Current

Operating and Storage Junction Temperature

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=35V

CBO

=3.0V

EBO

I =100μA

CBO

CEO

CE(SAT)

BE(ON)

I =1.0mA

I =10mA, I =1.0mA

0.30

0.85

800

=5.0V, I =1.0mA

=5.0V, I =100ꢀA

250

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =500ꢀA, f=20MHz

MHz

=5.0V, I =0, f=100kHz

4.0

R1 (23-August 2016)

12 3 4

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