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CP788X-2N5087 PDF预览

CP788X-2N5087

更新时间: 2024-10-31 17:00:59
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CENTRAL /
页数 文件大小 规格书
4页 840K
描述
50V,50mA,625mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A)

CP788X-2N5087 数据手册

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CP788X-2N5087  
PNP - General Purpose Transistor Die  
www.centralsemi.com  
The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
13.7 x 13.7 MILS  
5.9 MILS  
Die Thickness  
Base Bonding Pad Size  
Emitter Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
4.0 x 4.0 MILS  
5.5 x 5.5 MILS  
Al-Si – 17,000Å  
Au – 9,000Å  
1.8 MILS  
5 INCHES  
Gross Die Per Wafer  
91,469  
BACKSIDE COLLECTOR  
R0  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
50  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
50  
3.0  
V
V
Emitter-Base Voltage  
Continuous Collector Current  
Operating and Storage Junction Temperature  
I
50  
mA  
°C  
C
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=35V  
50  
nA  
CBO  
CB  
I
V
=3.0V  
50  
nA  
V
EBO  
EB  
BV  
BV  
I =100μA  
50  
50  
CBO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
I =1.0mA  
V
C
V
V
I =10mA, I =1.0mA  
0.30  
0.85  
800  
V
C
B
V
=5.0V, I =1.0mA  
V
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
V
V
V
V
V
=5.0V, I =100ꢀA  
250  
250  
250  
40  
C
=5.0V, I =1.0mA  
FE  
C
=5.0V, I =10mA  
FE  
C
f
=5.0V, I =500ꢀA, f=20MHz  
MHz  
pF  
T
C
C
=5.0V, I =0, f=100kHz  
4.0  
ob  
E
R1 (23-August 2016)  

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