Datasheet > CP773-CMPDM302PH-WS

CP773-CMPDM302PH-WS

更新时间： 2024-11-17 14:50:43

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CP773-CMPDM302PH-WS 技术参数

PROCESS CP773

MOSFET Transistor

P-Channel Enhancement-Mode MOSFET Chip

PROCESS DETAILS

Die Size

39 x 27 MILS

Die Thickness

7.5 MILS

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

6.5 x 6.5 MILS

30 x 20 MILS

Al - 40,000Å

Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å

GEOMETRY

GROSS DIE PER 8 INCH WAFER

43,500

PRINCIPAL DEVICE TYPES

CMPDM302PH

CTLDM304P-M832DS

R2 (18-October 2012)

www.centralsemi.com

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