Datasheet > CP761R

CP761R

更新时间： 2024-10-01 09:30:11

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	741K
描述
Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip

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中文翻译

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CP761R 数据手册

PROCESS CP761R

Small Signal MOSFET

P-Channel Enhancement-Mode MOSFET Chip

PROCESS DETAILS

Die Size

14.2 x 14.2 MILS

Die Thickness

3.9 MILS

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

3.94 x 3.94 MILS

3.94 x 7.08 MILS

Al-Si - 35,000Å

Au - 12,000Å

GEOMETRY

GROSS DIE PER 6 INCH WAFER

123,000

PRINCIPAL DEVICE TYPES

CEDM8001

CMNDM8001

R1 (2-September 2010)

www.centralsemi.com

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型号	品牌	获取价格	描述	数据表
CP761R-CEDM8001	CENTRAL	获取价格	Transistor
CP761R-CMNDM8001	CENTRAL	获取价格	Transistor
CP761X-CEDM8001	CENTRAL	获取价格	100mA,20V Bare die,14.173 X 14.173 mils,MOSFET
CP-762254-5-X	MACOM	获取价格	Label format - Old format order code cross reference
CP-762508-2.5-X	MACOM	获取价格	Label format - Old format order code cross reference
CP763V-CZT955	CENTRAL	获取价格	140V,4A,3W Bare die,48.800 X 48.800 mils,Transistor-Bipolar Power (>1A)
CP764R-8002A	CENTRAL	获取价格	Bare die,21.654 X 17.717 mils,P-Chan Enhancement Mode MOSFET
CP764X	CENTRAL	获取价格	Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip
CP764X-CMLDM8002	CENTRAL	获取价格	Bare die,21.654 X 17.717 mils,P-Chan Enhancement Mode MOSFET
CP767	CENTRAL	获取价格	Small Signal Transistor PNP- Saturated Switch Transistor Chip