Datasheet > CP764X

CP764X

更新时间： 2024-10-01 09:30:11

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	699K
描述
Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip

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CP764X 数据手册

PROCESS CP764X

Small Signal MOSFET Transistor

P-Channel Enhancement-Mode Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

21.7 x 17.7 MILS

5.5 MILS

Die Thickness

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

4.7 x 4.7 MILS

6.1 x 7.9 MILS

Al-Si - 35,000Å

Au - 12,000Å

GEOMETRY

GROSS DIE PER 6 INCH WAFER

62,600

PRINCIPAL DEVICE TYPES

CMLDM8002A

CMPDM8002A

CTLDM8002A-M621

R1 (22-March 2010)

www.centralsemi.com

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