Datasheet > CP773-CMPDM302PH

CP773-CMPDM302PH

更新时间： 2024-10-30 20:08:43

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CENTRAL		/
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4页	876K
描述
Small Signal Field-Effect Transistor,

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技术参数
数据手册

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CP773-CMPDM302PH 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

CP773-CMPDM302PH 数据手册

CP773-CMPDM302PH

P-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP773-CMPDM302PH is a silicon P-Channel MOSFET designed for high speed pulsed

ampliﬁer and driver applications.

MECHANICAL SPECIFICATIONS:

Die Size

39 x 27 MILS

7.5 MILS

Die Thickness

Gate Bonding Pad Size

Source Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

6.5 x 6.5 MILS

33 x 21 MILS

Al – 40,000Å

Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å

3.15 MILS

8 INCHES

Gross Die Per Wafer

43,500

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Operating and Storage Junction Temperature

2.4

9.6

T , T

-55 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=12V, V =0

100

GSSF GSSR

=20V, V =0

1.0

μA

DSS

=0, I =250μA

DSS

GS(th)

=V , I =250μA

0.7

1.4

GS DS

=4.5V, I =1.2A

0.091

0.129

DS(ON)

=2.5V, I =1.2A

DS(ON)

=5.0V, I =2.4A

4.6

=10V, V =0, f=1.0MHz

rss

iss

=10V, V =0, f=1.0MHz

800

=10V, V =0, f=1.0MHz

oss

=10V, V =5.0V, I =2.4A

9.6

4.2

2.6

g(tot)

=10V, V =5.0V, I =2.4A

=10V, I =2.4A, R =10Ω

off

=10V, I =2.4A, R =10Ω

R0 (25-August 2016)

12 3 4

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