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CP773-CMPDM302PH-CT PDF预览

CP773-CMPDM302PH-CT

更新时间: 2024-10-30 15:31:51
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 654K
描述
Transistor

CP773-CMPDM302PH-CT 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Base Number Matches:1

CP773-CMPDM302PH-CT 数据手册

 浏览型号CP773-CMPDM302PH-CT的Datasheet PDF文件第2页 
PROCESS CP773  
MOSFET Transistor  
P-Channel Enhancement-Mode MOSFET Chip  
PROCESS DETAILS  
Die Size  
39 x 27 MILS  
Die Thickness  
7.5 MILS  
Gate Bonding Pad Area  
Source Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
6.5 x 6.5 MILS  
30 x 20 MILS  
Al - 40,000Å  
Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å  
GEOMETRY  
GROSS DIE PER 8 INCH WAFER  
43,500  
PRINCIPAL DEVICE TYPES  
CMPDM302PH  
CTLDM304P-M832DS  
R2 (18-October 2012)  
www.centralsemi.com  

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