Datasheet > CP764X-CMLDM8002

CP764X-CMLDM8002

更新时间： 2024-06-27 12:12:09

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	655K
描述
Bare die,21.654 X 17.717 mils,P-Chan Enhancement Mode MOSFET

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CP764X-CMLDM8002 数据手册

PROCESS CP764X

Small Signal MOSFET Transistor

P-Channel Enhancement-Mode Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

21.7 x 17.7 MILS

5.5 MILS

Die Thickness

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

4.7 x 4.7 MILS

6.1 x 7.9 MILS

Al-Si - 35,000Å

Au - 9,000Å

GEOMETRY

GROSS DIE PER 6 INCH WAFER

62,600

PRINCIPAL DEVICE TYPES

CMLDM8002A

CMPDM8002A

CTLDM8002A-M621

R2 (30-August 2023)

www.centralsemi.com

12 3 4

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