Datasheet > CP767

CP767

更新时间： 2024-09-13 09:30:11

品牌	Logo	应用领域
CENTRAL		晶体开关晶体管
页数	文件大小	规格书
1页	80K
描述
Small Signal Transistor PNP- Saturated Switch Transistor Chip

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CP767 数据手册

PROCESS CP767

Small Signal Transistor

PNP- Saturated Switch Transistor Chip

PRELIMINARY

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

30 x 30 MILS

Die Thickness

9.0 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

3.85 x 4.20 MILS

7.35 x 3.75 MILS

Al - 30,000

Back Side Metalization

Au - 15,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

12,300

PRINCIPAL DEVICE TYPES

2N3467

2N3468

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R0 (24-June 2003)

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