Datasheet > CP608-2N6475

CP608-2N6475

更新时间： 2024-10-01 14:55:11

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	598K
描述
100V,4A,40W Bare die,66.000 X 66.000 mils,Transistor-Bipolar Power (>1A)

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CP608-2N6475 数据手册

CP608-2N6475

PNP - High Current Transistor Die

4.0 Amp, 100 Volt

www.centralsemi.com

The CP6ꢀ8-2N6475 is a silicon PNP transistor designed for and high current applications.

MECHANICAL SPECIFICATIONS:

Die Size

66 x 66 MILS

12.5 1.ꢀ MILS

12 x 24 MILS

11 x 14 MILS

Al – 5ꢀ,ꢀꢀꢀÅ

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

Cr/Ni/Ag – 1,ꢀꢀꢀÅ/6,ꢀꢀꢀÅ/1ꢀ,ꢀꢀꢀÅ

3.ꢀ MILS

4 INCHES

Gross Die Per Wafer

2,645

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

11ꢀ

CBO

CER

CEO

EBO

Collector-Emitter Voltage (R =1ꢀꢀΩ)

Collector-Emitter Voltage

1ꢀꢀ

Emitter-Base Voltage

5.ꢀ

Continuous Collector Current

Continuous Base Current

4.ꢀ

2.ꢀ

Operating and Storage Junction Temperature

T , T

-65 to +15ꢀ

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=11ꢀV, V =1.5V

1ꢀꢀ

μA

CEV

CER

CEO

EBO

=11ꢀV, R =1ꢀꢀΩ

=5ꢀV

1ꢀꢀ

1.ꢀ

μA

=5.ꢀV

I =1ꢀꢀmA, R =1ꢀꢀΩ

11ꢀ

1ꢀꢀ

CER

CEO

I =1ꢀꢀmA

I =1.5A, I =ꢀ.15A

1.2

2.5

2.ꢀ

3.5

15ꢀ

CE(SAT)

BE(ON)

I =4.ꢀA, I =2.ꢀA

=4.ꢀV, I =1.5A

=2.5V, I =4.ꢀA

=4.ꢀV, I =1.5A

2.ꢀ

2ꢀ

=2.5V, I =4.ꢀA

=4.ꢀV, I =ꢀ.5A, f=5ꢀkHz

=4.ꢀV, I =ꢀ.5A

5.ꢀ

MHz

=1ꢀV, f=1.ꢀMHz

25ꢀ

Rꢀ (2ꢀ-July 2ꢀ16)

12 3 4 5

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