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CMPT5401PBFREE PDF预览

CMPT5401PBFREE

更新时间: 2024-11-08 13:06:59
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 81K
描述
Small Signal Bipolar Transistor,

CMPT5401PBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.71JESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CMPT5401PBFREE 数据手册

 浏览型号CMPT5401PBFREE的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
CMPT5401  
S e m ic o n d u c t o r Co r p .  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The  
CENTRAL  
SEMICONDUCTOR  
CMPT5401 type is an PNP silicon transistor  
manufactured by the epitaxial planar process,  
epoxy molded in a surface mount package,  
designedforhighvoltageamplifierapplications.  
Marking Code is C2L.  
SOT-23 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
160  
150  
5.0  
500  
350  
V
V
V
mA  
mW  
CBO  
CEO  
EBO  
I
P
C
Power Dissipation  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
357  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
50  
50  
UNITS  
I
I
V
V
=100V  
=100V, T =150 C  
nA  
µA  
V
V
V
V
V
V
V
CBO  
CBO  
CBO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
FE  
FE  
T
CB  
CB  
o
A
BV  
BV  
BV  
V
V
V
V
h
h
h
f
C
I =100µA  
160  
150  
5.0  
C
I =1.0mA  
C
I =10µA  
E
I =10mA, I =1.0mA  
0.2  
0.5  
1.0  
1.0  
C
B
B
B
B
I =50mA, I =5.0mA  
C
I =10mA, I =1.0mA  
C
I =50mA, I =5.0mA  
C
V
=5.0V, I =1.0mA  
50  
60  
50  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
=5.0V, I =10mA  
C
240  
=5.0V, I =50mA  
C
=10V, I =10mA, f=100MHz  
C
100  
300  
6.0  
MHz  
pF  
=10V, I =0, f=1.0MHz  
ob  
E
184  

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