Datasheet > CMPT5551HCTR13PBFREE

CMPT5551HCTR13PBFREE

更新时间： 2024-11-09 04:45:15

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	321K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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CMPT5551HCTR13PBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	1 A
配置：	Single	最小直流电流增益 (hFE)：	80
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

CMPT5551HCTR13PBFREE 数据手册

CMPT5551HC

www.centralsemi.com

SURFACE MOUNT

HIGH CURRENT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5551HC

type is a high current NPN silicon transistor

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for high

voltage and high current amplifier applications.

MARKING CODE: 1FHC

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

180

160

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Power Dissipation

1.0

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

=120V

CBO

EBO

=120V, T =100°C

=4.0V

I =100µA

180

160

6.0

CBO

CEO

I =1.0mA

I =10µA

EBO

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =1.0A

=10V, I =10mA, f=100MHz

100

MHz

=10V, I =0, f=1.0MHz

R1 (1-February 2010)

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