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CMPT5551HCLEADFREE PDF预览

CMPT5551HCLEADFREE

更新时间: 2024-11-10 15:29:39
品牌 Logo 应用领域
CENTRAL 放大器光电二极管晶体管
页数 文件大小 规格书
2页 321K
描述
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

CMPT5551HCLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.19最大集电极电流 (IC):1 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN (315)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

CMPT5551HCLEADFREE 数据手册

 浏览型号CMPT5551HCLEADFREE的Datasheet PDF文件第2页 
CMPT5551HC  
www.centralsemi.com  
SURFACE MOUNT  
HIGH CURRENT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPT5551HC  
type is a high current NPN silicon transistor  
manufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed for high  
voltage and high current amplifier applications.  
MARKING CODE: 1FHC  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
180  
160  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6.0  
V
Continuous Collector Current  
Power Dissipation  
I
1.0  
A
C
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
µA  
nA  
V
I
I
I
V
V
V
=120V  
50  
50  
50  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=120V, T =100°C  
A
=4.0V  
BV  
BV  
BV  
I =100µA  
180  
160  
6.0  
CBO  
CEO  
C
I =1.0mA  
V
C
I =10µA  
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
0.15  
0.20  
1.00  
1.00  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
V
C
B
I =10mA, I =1.0mA  
V
C
B
I =50mA, I =5.0mA  
V
C
B
h
h
h
h
V
=5.0V, I =1.0mA  
80  
80  
30  
CE  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
V
=5.0V, I =10mA  
250  
FE  
C
=5.0V, I =50mA  
FE  
C
=10V, I =1.0A  
10  
FE  
C
f
=10V, I =10mA, f=100MHz  
100  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
E
15  
ob  
R1 (1-February 2010)  

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