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CMPT5551TRLEADFREE PDF预览

CMPT5551TRLEADFREE

更新时间: 2024-09-21 13:01:19
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 82K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,

CMPT5551TRLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.12
最大集电极电流 (IC):0.6 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.2 V
Base Number Matches:1

CMPT5551TRLEADFREE 数据手册

 浏览型号CMPT5551TRLEADFREE的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
CMPT5551  
S e m ic o n d u c t o r Co r p .  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR  
CMPT5551 type is an NPN silicon transistor  
manufactured bythe epitaxial planar process,  
epoxy molded in a surface mount package,  
designed for high voltage amplifier  
applications.  
Marking Code is 1FF.  
SOT-23 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
180  
160  
6.0  
600  
350  
V
V
V
CBO  
CEO  
EBO  
V
V
I
mA  
mW  
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
J stg  
JA  
-65 to +150  
357  
C
C/W  
o
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
50  
50  
UNITS  
I
I
V
V
=120V  
nA  
µ A  
V
V
V
V
V
V
V
CBO  
CBO  
CBO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
FE  
FE  
T
CB  
o
120V, T =100 C  
CB=  
A
BV  
BV  
BV  
V
V
V
V
h
h
h
f
C
I =100µA  
180  
160  
6.0  
C
I =1.0mA  
C
I =10µA  
E
I =10mA, I =1.0mA  
0.15  
0.20  
1.00  
1.00  
C
B
B
B
B
I =50mA, I =5.0mA  
C
I =10mA, I =1.0mA  
C
I =50mA, I =5.0mA  
C
V
=5.0V, I =1.0mA  
80  
80  
30  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
=5.0V, IC=10mA  
250  
=5.0V, I =50mA  
C
=10V, I =10mA, f=100MHz  
C
100  
300  
6.0  
MHz  
pF  
=10V, I =0, f=1.0MHz  
ob  
E
186  

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