Datasheet > CMPT6427_10

CMPT6427_10

更新时间： 2024-09-21 09:27:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管达林顿晶体管
页数	文件大小	规格书
2页	324K
描述
SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR

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CMPT6427_10 数据手册

CMPT6427

www.centralsemi.com

SURFACE MOUNT

NPN SILICON

DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT6427 type

is a NPN silicon darlington transistor manufactured by

the epitaxial planar process, epoxy molded in a surface

mount package, designed for applications requiring

extremely high gain.

MARKING CODE: C1V

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

500

°C

350

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +150

357

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=30V

=25V

=10V

CBO

CEO

EBO

1.0

I =100μA

CBO

CEO

I =10mA

I =10μA

EBO

I =50mA, I =0.5mA

1.20

1.50

2.00

1.75

100K

200K

140K

CE(SAT)

BE(SAT)

BE(ON)

I =500mA, I =0.5mA

=5.0V, I =50mA

=5.0V, I =10mA

10K

20K

14K

130

=5.0V, I =100mA

=5.0V, I =500mA

=5.0V, I =10mA, f=100MHz

MHz

=10V, I =0, f=1.0MHz

7.0

=0.5V, I =0, f=1.0MHz

=5.0V, I =1.0mA, R =100kΩ,

C S

f=1.0kHz to 15.7kHz

R6 (1-February 2010)

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