Datasheet > CMPT6429BKPBFREE

CMPT6429BKPBFREE

更新时间： 2024-09-22 07:14:23

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	322K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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CMPT6429BKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	0.2 A	配置：	Single
最小直流电流增益 (hFE)：	500	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.35 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

CMPT6429BKPBFREE 数据手册

CMPT6428

CMPT6429

www.centralsemi.com

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT6428 and

CMPT6429 are NPN Silicon Transistors manufactured

by the epitaxial planar process, epoxy molded in

a surface mount package, designed for high gain

amplifier applications.

MARKING CODES: CMPT6428: C1K

CMPT6429: C1L

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

CMPT6428

CMPT6429

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

200

350

Continuous Collector Current

Power Dissipation

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

CMPT6428

MIN MAX

CMPT6429

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=30V

=5.0V

100

CBO

CEO

EBO

I =100µA

CBO

CEO

I =1.0mA

I =10mA, I =0.5mA

0.20

0.60

0.20

0.60

0.66

CE(SAT)

BE(ON)

I =100mA, I =5.0mA

=5.0V, I =1.0mA

0.56 0.66

0.56

500

100

=5.0V, I =10µA

250

100

=5.0V, I =100µA

650

1250

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =1.0mA, f=100MHz

700

3.0

8.0

700

3.0

8.0

MHz

=10V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

R5 (1-February 2010)

中文翻译

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