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CMPT591EBK PDF预览

CMPT591EBK

更新时间: 2024-09-21 20:01:15
品牌 Logo 应用领域
CENTRAL 放大器光电二极管晶体管
页数 文件大小 规格书
2页 2584K
描述
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

CMPT591EBK 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.21最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

CMPT591EBK 数据手册

 浏览型号CMPT591EBK的Datasheet PDF文件第2页 

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