CMPT6427TRPBFREE

更新时间： 2024-09-21 13:06:59

品牌	Logo	应用领域
CENTRAL		晶体晶体管达林顿晶体管
页数	文件大小	规格书
2页	81K
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数据手册

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CMPT6427TRPBFREE 数据手册

Ce n t r a l

CMPT6427

S e m ic o n d u c t o r Co r p .

NPN SILICON

DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CMPT6427 type is a NPN Silicon Darlington

Transistors manufactured by the epitaxial

planar process, epoxy molded in a surface

mount package, designed for applications

requiring extremely high gain.

Marking Code is C1V.

SOT-23 CASE

MAXIMUM RATINGS (T =25 C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

350

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

357

C/W

J stg

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

1.0

UNITS

=30V

=25V

=10V

µA

CBO

CEO

EBO

CBO

CEO

EBO

CE(SAT)

BE(SAT)

BE(ON)

I =100µA

I =10mA

I =10µA

I =50mA, I =0.5mA

1.20

1.50

2.00

1.75

100K

200K

140K

I =500mA, I =0.5mA

=5.0V, I =50mA

=5.0V, I =10mA

10K

20K

14K

130

=5.0V, I =100mA

=5.0V, I =500mA

=5.0V, IC=10mA, f=100MHz

MHz

188

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